by Micron Technology, Inc.
Micron Technology, Inc., announced today it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Engineered for high-end and flagship phones, Micron’s discrete UFS 3.1 mobile NAND unlocks 5G’s potential with up to 75% faster sequential write and random read performance than prior generations,1 enabling downloads of two-hour 4K movies2 in as little as 9.6 seconds.
by Micron Technology, Inc.
Semiconductor giant Micron Technology broke ground in North Coast yesterday to add new cleanroom space for production of its 3D NAND flash memory products. Micron did not disclose the cost, except to say that the new facility will be a “multi-billion- dollar investment”. It will be equipped over the next five years or more and add 1,000 new jobs in Singapore. As part of its agreement with the Economic Development Board, Micron will also broaden its research and development (R&D) capabilities here. The 1,000 new roles it is adding will comprise mainly engineers and technicians related to R&D and manufacturing.
by Cleanroom Connect Editor
The new mobile 3D NAND flash products pack more storage cells into a smaller die area, and by utilizing Micron’s CMOS under Array (CuA), they deliver a best-in-class die size. Micron’s unique approach places all the flash memory layers on top of the logic array, maximizing the use of space in the smartphone design.
