Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences

Micron Launches World’s First 176-Layer NAND in Mobile Solutions to Power Lightning-Fast 5G Experiences

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Micron Technology, Inc., announced today it has begun volume shipments of the world’s first 176-layer NAND Universal Flash Storage (UFS) 3.1 mobile solution. Engineered for high-end and flagship phones, Micron’s discrete UFS 3.1 mobile NAND unlocks 5G’s potential with up to 75% faster sequential write and random read performance than prior generations,1 enabling downloads of two-hour 4K movies2 in as little as 9.6 seconds.

Mobile 3D NAND Flash Memory for Smartphones

Mobile 3D NAND Flash Memory for Smartphones

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The new mobile 3D NAND flash products pack more storage cells into a smaller die area, and by utilizing Micron’s CMOS under Array (CuA), they deliver a best-in-class die size. Micron’s unique approach places all the flash memory layers on top of the logic array, maximizing the use of space in the smartphone design.